Pulsed laser deposition and characterization of PZT thin films

被引:21
|
作者
Verardi, P
Dinescu, M
Craciun, F
机构
[1] CNR, Ist Acust Om Corbino, Area Ric Tor Vergata, I-00133 Rome, Italy
[2] IFA, NILPRP, RO-76900 Bucharest, Romania
关键词
piezoelectric thin film; PZT; TiN; laser deposition;
D O I
10.1016/S0169-4332(99)00415-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Pb(Zr0.53Ti0.47)O-3 (PZT) thin films were deposited on TiN coated Si substrates. PZT and TiN layers were grown by two subsequent laser ablation processes in oxygen and, respectively, nitrogen reactive atmosphere. Both deposition processes were conducted at quite low substrate temperature: 350 degrees C for TIN and 375 degrees C for PZT in the same experimental setup (Nd-YAG laser, lambda = 1.06 mu m, energy/pulse 0.3 J, t(FWHM) = 10 ns), The TIN electrode and PZT films were crystalline as revealed by XRD. The orientation of the PZT films was mainly (111) with about 30% component of (002) crystallographic phase. The high frequency optical vibrational modes of the ferroelectric PZT structure have been obtained from FTIR measurements. A mapping of the d(33) piezoelectric constant was obtained. Polarization hysteresis cycles of the samples were measured and high values of the remanent polarization and coercive electric field were obtained for all the samples. (C) 2000 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码:514 / 518
页数:5
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