Pulsed KrF excimer laser annealing of silicon solar cell

被引：37
|
作者：
Azuma, H [1 ]
Takeuchi, A
Ito, T
Fukushima, H
Motohiro, T
Yamaguchi, M
机构：
[1] Toyota Cent Res & Dev Labs Inc, Mat Div 2, Aichi 4801192, Japan
[2] Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2002年 / 74卷 / 1-4期
关键词：
excimer laser; laser annealing; silicon film; solar cell; heat-flow simulation; crystalline;
D O I：
10.1016/S0927-0248(02)00087-9
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The pulsed KrF excimer laser annealing of silicon films for solar cell with EBEP-CVD and LP-CVD was studied theoretically and experimentally. Three-dimensional thermal diffusion equation for microcrystalline and amorphous silicon was solved by using the finite difference methods. The results of our heat-flow simulation of laser re-crystallization in a laser irradiation with 50 ns pulse duration almost agree with the experimental results in recrystallization depth of 0.7 mum for microcrystalline silicon (EBEP-CVD) and 0.4 mum for amorphous silicon (LP-CVD) in a single pulse excimer laser annealing. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：289 / 294
页数：6
相关论文
共 50 条
  • [1] Crystallization process of polycrystalline silicon by KrF excimer laser annealing
    Watanabe, Hiroyuki, 1600, JJAP, Minato-ku, Japan (33):
  • [2] Properties of SBT films crystallized by pulsed excimer (KrF) laser annealing
    Zhu, T
    Wang, YP
    Zhou, L
    Liu, ZG
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 89 (1-3): : 390 - 393
  • [3] PULSED EXCIMER LASER ANNEALING OF ION-IMPLANTED SILICON - CHARACTERIZATION AND SOLAR-CELL FABRICATION
    LOWNDES, DH
    CLELAND, JW
    CHRISTIE, WH
    EBY, RE
    JELLISON, GE
    NARAYAN, J
    WESTBROOK, RD
    WOOD, RF
    NILSON, JA
    DASS, SC
    APPLIED PHYSICS LETTERS, 1982, 41 (10) : 938 - 940
  • [4] CRYSTALLIZATION PROCESS OF POLYCRYSTALLINE SILICON BY KRF EXCIMER-LASER ANNEALING
    WATANABE, H
    MIKI, H
    SUGAI, S
    KAWASAKI, K
    KIOKA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (08): : 4491 - 4498
  • [5] PULSED EXCIMER (KRF) LASER MELTING OF AMORPHOUS AND CRYSTALLINE SILICON LAYERS
    NARAYAN, J
    WHITE, CW
    AZIZ, MJ
    STRITZKER, B
    WALTHUIS, A
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 564 - 567
  • [6] Pulsed KrF excimer laser dopant activation in nanocrystal silicon in a silicon dioxide matrix
    Zhang, Tian
    Simonds, Brian
    Nomoto, Keita
    Veettil, Binesh Puthen
    Lin, Ziyun
    Wurfl, Ivan Perez
    Conibeer, Gavin
    APPLIED PHYSICS LETTERS, 2016, 108 (08)
  • [7] The quadratic finite element thermal analysis of silicon irradiated by a pulsed KrF excimer laser
    Nakamiya, T
    Ikegami, T
    Ebihara, K
    COMPUTATIONAL MATERIALS SCIENCE, 2000, 17 (2-4) : 409 - 413
  • [8] Modeling Boron Profiles in Silicon after Pulsed Excimer Laser Annealing
    Hackenberg, M.
    Huet, K.
    Negru, R.
    Venturini, J.
    Fisicaro, G.
    La Magna, A.
    Pichler, P.
    ION IMPLANTATION TECHNOLOGY 2012, 2012, 1496 : 241 - 244
  • [9] Evolution of implanted carbon in silicon upon pulsed excimer laser annealing
    Kantor, Z
    Fogarassy, E
    Grob, A
    Grob, JJ
    Muller, D
    Prevot, B
    Stuck, R
    APPLIED PHYSICS LETTERS, 1996, 69 (07) : 969 - 971
  • [10] Pulsed laser deposition of hydroxyapatite films by KrF excimer
    Torrisi, L
    Trusso, S
    Di Marco, G
    Parisi, P
    PHYSICA MEDICA, 2001, 17 (04) : 227 - 231
12345