Characterization of CNx thin films synthesized by laser ablation technique

被引:1
|
作者
Zouadi, N. [1 ]
Abdelli-Messaci, S. [2 ]
Gabouze, N. [1 ]
Kerdja, T. [2 ]
Bradai, D.
机构
[1] Unite Dev Technol Silicium, 2Bd Frantz Fanon,BP 399, Algiers, Algeria
[2] Ctr Dev des Technol Avancees, Algiers, Algeria
来源
关键词
Thin films; Carbon nitrides; Reactive laser ablation; AMORPHOUS-CARBON NITRIDE; OPTICAL CHARACTERIZATION;
D O I
10.4028/www.scientific.net/MSF.609.265
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work we report the optical characteristics of carbon nitride films produced by a KrF excimer laser ablation technique. The ablated materials were collected on different wafers, glass and porous silicon for different N-2 pressures (0.1-0.5mbar). The thin films were synthesized at room temperature. The deposited thin films were characterized by spectrophotometry, ellipsometry, scanning electron microscopy (SEM) and Fourier Transform Infrared Spectroscopy (FTIR). The results show that the optical band gap deduced from optical transmission spectra in the ultraviolet-visible - near infrared range increases with deposition time and with nitrogen pressures increasing. SEM observation indicates that the CNx film is granular. Finally, FTIR spectra reveal carbon nitride absorption bands which do not seem change considerably with N-2 pressures.
引用
收藏
页码:265 / +
页数:2
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