Polysilicon-on-Insulator Photonic Devices

被引：0

作者：

Preston, Kyle ^{[1
]}

Lipson, Michal ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5 | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate ring resonators with Q = 4,000 using polycrystalline silicon annealed at a low temperature of 600 degrees C, which is compatible with standard CMOS processes. (C)2007 Optical Society of America

引用

页码：516 / 517

页数：2

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