Ab initio calculation of relative permittivity of La-doped HfO2

被引：1
|
作者：
Ong, T. M. [1 ,2 ,3 ]
Xu, S. [1 ,2 ]
机构：
[1] Nanyang Technol Univ, NIE, Plasma Sources & Applicat Ctr, Singapore 637616, Singapore
[2] Nanyang Technol Univ, Inst Adv Studies, Singapore 637616, Singapore
[3] ASTAR, Inst Mat Res & Engn, Res Link 3, Singapore 117602, Singapore
来源：
PHYSICA B-CONDENSED MATTER | 2014年 / 454卷
关键词：
Hafnium oxide; Lanthanum; Berry phase; DIELECTRIC-PROPERTIES; GATE DIELECTRICS; HAFNIUM OXIDE; FILMS; INTEGRATION; SILICON;
D O I：
10.1016/j.physb.2014.07.074
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
First principles calculations of HfO2 and La-doped HfO2 structures were carried out to investigate the effect of La doping on the relative permittivity of HfO2 films. In this study 6.25% of La was incorporated into HfO2. Upon examination, we found out that La addition increased the value of the relative permittivity from 19 to 26 and this was because the La-induced distortion increased the range of frequencies that contribute to the lR-active modes. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：184 / 188
页数：5
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