Analysis of low-threshold optically pumped III-nitride microdisk lasers

被引：22

作者：

Tabataba-Vakili, Farsane ^{[1
,2
]}

Brimont, Christelle ^{[3
]}

Alloing, Blandine ^{[4
]}

Damilano, Benjamin ^{[4
]}

Doyennette, Laetitia ^{[3
]}

Guillet, Thierry ^{[3
]}

El Kurdi, Moustafa ^{[1
]}

Chenot, Sebastien ^{[4
]}

Brandli, Virginie ^{[4
]}

Frayssinet, Eric ^{[4
]}

Duboz, Jean-Yves ^{[4
]}

Semond, Fabrice ^{[4
]}

Gayral, Bruno ^{[2
]}

Boucaud, Philippe ^{[4
]}

机构：

[1] Univ Paris Saclay, C2N, CNRS, F-91120 Palaiseau, France

[2] Univ Grenoble Alpes, IRIG Pheliqs, CEA, F-38000 Grenoble, France

[3] Univ Montpellier, CNRS, L2C, F-34095 Montpellier, France

[4] Univ Cote dAzur, CRHEA, CNRS, F-06560 Valbonne, France

来源：

APPLIED PHYSICS LETTERS | 2020年 / 117卷 / 12期

关键词：

GAIN;

D O I：

10.1063/5.0015252

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-threshold lasing under pulsed optical pumping is demonstrated at room temperature for III-nitride microdisks with InGaN/GaN quantum wells on Si in the blue spectral range. Thresholds in the range of 18 kW/cm(2) have been achieved along with narrow linewidths of 0.07 nm and a large peak-to-background dynamic of 300. We compare this threshold range with the one that can be calculated using a rate equation model. We show that thresholds in the few kW/cm(2) range constitute the best that can he achieved with III-nitride quantum wells at room temperature. The sensitivity of lasing on the fabrication process is also discussed. Published under license by AIP Publishing.

引用

页数：6

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