Boron-doped Bi12TiO20 single crystals

被引：0
|
作者：
Egorysheva, AV [1 ]
Dudkina, TD [1 ]
Volkov, VV [1 ]
机构：
[1] Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Moscow 117907, Russia
来源：
INORGANIC MATERIALS | 1999年 / 35卷 / 12期
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D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Boron-doped Bi12TiO20 single crystals were grown by the Czochralski technique from charges containing from 0.011 to 0.084 wt % B. The boron distribution coefficient was found to be <0.005. The absorption and photoinduced absorption spectra and spectral response of photocurrent were measured. A correlation between the spectral characteristics and the fraction of Ti atoms on tetrahedral sites in Bi12TiO20 was revealed.
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页码：1284 / 1287
页数：4
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