Size-dependent magnetic tuning of lateral photovoltaic effect in nonmagnetic Si-based Schottky junctions

被引：7
|
作者：
Zhou, Peiqi
Gan, Zhikai
Huang, Xu
Mei, Chunlian
Xia, Yuxing
Wang, Hui [1 ]
机构：
[1] Shanghai Jiao Tong Univ, Sch Phys & Astron, State Key Lab Adv Opt Commun Syst & Networks, 800 Dongchuan Rd, Shanghai 200240, Peoples R China
来源：
SCIENTIFIC REPORTS | 2017年 / 7卷
基金：
中国国家自然科学基金;
关键词：
POSITION-SENSITIVE DETECTOR;
D O I：
10.1038/srep46377
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
In this article, we report a magnetic tuning lateral photovoltaic effect (LPE) in a nonmagnetic Si-based Schottky junctions. In the magnetic field intensity range of 0 to 1.6 T, the variation amplitude of LPE sensitivity is as high as 94.8%, the change of LPV is and the change rate of lateral photo-voltage even reaches 520 mV/T at 1.5 T, which is apparently higher than the results of previous reported researches in magnetic materials. This effect is attributed to the combined result of the influence of magnetic field on diffusion current and the rectification property of our anisotropic structure. This work may expand the application of LPE in magnetism field such as magnetic sensor and magnetoresistance, and it suggests a new way to investigate the carrier transport in Schottky junctions under magnetic field.
引用
收藏
页数：7
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