New test structure for high resolution leakage current and capacitance measurements in CMOS imager applications

被引：1

作者：

Odiot, F ^{[1
]}

Brut, H ^{[1
]}

Hurwitz, J ^{[1
]}

Grant, L ^{[1
]}

Dunne, B ^{[1
]}

Moragues, JM ^{[1
]}

机构：

[1] ST Microelect, Cent R&D, F-38926 Crolles, France

来源：

ICMTS 2004: PROCEEDINGS OF THE 2004 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES | 2004年

关键词：

D O I：

10.1109/ICMTS.2004.1309490

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

measurement of dark current and capacitance of pixel array are fundamental in the development of new sensor technologies. These parameters are usually very low and require large structures to be accurately measured. This is area consuming and, in any case, needs the use of high-resolution semi-automatic test bench. In this paper, a new methodology based on a capacitance discharge measurement is proposed and validated by comparison to direct measurements. It offers a small structure need, a low-test time and a high resolution, and can also be implemented on full automatic test bench for in-line monitoring.

引用

页码：253 / 256

页数：4

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