Efficient CVD diamond film/alumina composite substrate for high density electronic packaging application

被引:6
|
作者
Su, Qingfeng [1 ]
Liu, Jianmin [1 ]
Wang, Linjun [1 ]
Shi, Weimin [1 ]
Xia, Yiben [1 ]
机构
[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China
基金
中国国家自然科学基金;
关键词
diamond film; dielectric properties; thermal properties; high power electronics;
D O I
10.1016/j.diamond.2005.12.036
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Due to its extreme hardness, chemical and mechanical stability, large band gap, low dielectric constant and highest thermal conductivity, diamond film is expected to be an excellent electronic packaging material for high frequency and high power devices. Under an alcohol concentration of 0.8% and a substrate temperature of 850 degrees C, high quality diamond films deposited on alumina are obtained by hot filament chemical vapor deposition (HFCVD) method using the optimum parameters determined by an infrared spectroscopic ellipsometer. Prior to the deposition of diamond film, carbon ions are implanted into alumina wafers to release the residual stress between interfaces. The measurement results indicate that dielectric properties and the thermal conductivity of diamond film/alumina composites are improved further with the increase of diamond coating. When the thickness of diamond coating is up to 100 mu m, dielectric constant and dielectric loss of diamond film/alumina composite are 6.5 and 1.1 x 10(-3), respectively. However, a thermal conductivity of 3.98 W/cm.K is obtained. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:1550 / 1554
页数:5
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