Near infrared electroluminescence from p-NiO/n-InN/n-GaN light-emitting diode fabricated by PAMBE

被引：24

作者：

Zhao, Yang ^{[1
]}

Wang, Hui ^{[1
]}

Gong, Xiaoyang ^{[1
]}

Li, Qiuze ^{[1
]}

Wu, Guoguang ^{[2
]}

Li, Wancheng ^{[2
]}

Li, Xinzhong ^{[1
]}

Du, Guotong ^{[1
,2
]}

机构：

[1] Henan Univ Sci & Technol, Sch Phys & Engn, 263 Kaiyuan Ave, Luoyang 471003, Peoples R China

[2] Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Qianjin St 2699, Changchun 130012, Peoples R China

来源：

JOURNAL OF LUMINESCENCE | 2017年 / 186卷

基金：

中国国家自然科学基金;

关键词：

InN; PAMBE; Light-emitting diode; Electroluminescence; FUNDAMENTAL-BAND GAP; GROWTH; TEMPERATURE; SAPPHIRE; EMISSION; FILMS;

D O I：

10.1016/j.jlumin.2017.02.053

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Near infrared light-emitting diode (LED) based on p-NiO/n-InN/n-GaN was realized by plasma-assisted molecular beam epitaxy (PAMBE) combined with radio frequency (rf) magnetron sputtering. The device exhibited diode-like rectifying current-voltage characteristics with a turn-on voltage of 1.0 V. Under forward bias, prominent near infrared (NIR) emissions were observed at peak around 1570 nm at room temperature. The NIR emission was ascribed to the band-edge emission of InN epilayer based on the photoluminescence spectrum and band diagram of the heterojunction. Moreover, the study of the LED in terms of the stability was also discussed. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：243 / 246

页数：4

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