Effect of high temperature RTA on the oxygen precipitate formation and the COP dissolution

The effect of high temperature RTA on intrinsic gettering performance and the COP dissolution is reviewed. A high temperature RTA such as 1250 degrees C, 10sec, produces the vacancy supersaturation via a fast cooling, enhancing the density of oxygen precipitates during a following heat-treatment. In the nitrogen ambient, from the bulk of similar to 5 mu m the density of oxygen precipitates decreases with increasing with the depth of the bulk silicon, since the vacancy silicon are injected from the wafer surface. On the other hand. In both argon and hydrogen ambient, from the bulk of similar to 50 mu m the density of oxygen precipitates increases with the depth of the silicon bulk, since interstitial silicon are injected from the wafer surface. In both argon and hydrogen ambient, the injection of interstitial silicon from the wafer surface shrinks COPs located at the wafer surface.