Effect of oxygen content and superconductivity on the nonvolatile resistive switching in YBa2Cu3O6+x/Nb-doped SrTiO3 heterojunctions

被引：40
|
作者：
Zhang, H. J. [1 ]
Zhang, X. P.
Shi, J. P.
Tian, H. F.
Zhao, Y. G.
机构：
[1] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 09期
基金：
美国国家科学基金会;
关键词：
barium compounds; electrical resistivity; high-temperature superconductors; niobium; strontium compounds; superconductor-normal-superconductor devices; vacancies (crystal); yttrium compounds; RESISTANCE; YBA2CU3O7-DELTA; VACANCIES; MEMORY;
D O I：
10.1063/1.3095493
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors report on the resistive switching effect in YBa2Cu3O6+x/Nb-doped SrTiO3 heterojunctions. The current-voltage curves of these heterojunctions show hysteresis, which increases with decreasing temperature and oxygen content. Multiresistance states are realized by voltage pulses with different amplitudes. The relaxation of the junction current after switching follows the Curie-Von Schweidler law. More interestingly, the resistance of the low resistance state for the heterojunction shows a metallic behavior with a remarkable drop at T-c. The results were discussed in terms of the trapping-detrapping process via oxygen vacancies near the interface of the heterojunction and the conducting filaments through the junction barrier.
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页数：3
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