Size dependence of the work function in InAs quantum dots on GaAs(001) as studied by Kelvin force probe microscopy

被引：28

作者：

Yamauchi, T ^{[1
]}

Tabuchi, M

Nakamura, A

机构：

[1] Japan Sci & Technol Agcy, Core Res Evolut Sci & Technol, Shibuya Ku, Tokyo 1500002, Japan

[2] Nagoya Univ, Venture Business Lab, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[3] Nagoya Univ, Dept Appl Phys, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 19期

关键词：

D O I：

10.1063/1.1745110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated a work function of single InAs quantum dots (QDs) on GaAs(001) correlating with the dot size by means of Kelvin force probe microscopy. The observed contact potential difference (CPD) of the single QD is lower than that of an InAs wetting layer, and increases with decreasing QD height. The height dependence of the CPD is well interpreted in terms of the quantum size effect by which the amount of accumulated charges in the QD is determined through the confinement energy levels in the QD. (C) 2004 American Institute of Physics.

引用

页码：3834 / 3836

页数：3

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