A new approach to joining of silicon carbide-based materials for high temperature applications

被引：0
|
作者：
Singh, M [1 ]
机构：
[1] NASA, Lewis Res Ctr Grp, FDC NYMA Inc, Cleveland, OH 44135 USA
来源：
INDUSTRIAL CERAMICS | 1999年 / 19卷 / 03期
关键词：
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Ceramic joining is recognized as one of the enabling technologies for the application of silicon carbide-based materials in a number of high temperature applications. An affordable, robust technique for the joining of silicon carbide-based ceramics has been developed. This technique is capable of producing joints with tailorable thickness and composition. Microstructure and mechanical properties of reaction formed joints in a reaction bonded silicon carbide have been reported. These joints maintain their mechanical strengths at high temperatures (up to 1350 degrees C) in air. This technique is capable of joining large and complex shaped ceramic components.
引用
收藏
页码：171 / 172
页数：2
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