A 60 GHz High Gain Transformer-Coupled Differential Power Amplifier in 65nm CMOS

被引:0
|
作者
Liu, Jenny Yi-Chun [1 ]
Gu, Qun Jane [1 ]
LaRocca, Tim [2 ]
Wang, Ning-Yi [1 ]
Wu, Yi-Cheng [1 ]
Chang, Mau-Chung Frank [1 ]
机构
[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
[2] Northrop Grumman Aerosp Syst, Redondo Beach, CA 90278 USA
关键词
CMOS; differential amplifiers; millimeter-wave; transformers;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A fully differential 60 GHz three-stage transformer coupled amplifier is designed and implemented in 65 nm digital CMOS process. On-chip transformers which offer DC biasing for individual stages, extra stabilization mechanisms, and simultaneous input/inter-stage/output matching networks are used to facilitate a compact circuit design. With a cascoded circuit configuration, the amplifier is tested with a linear gain of 30.5 dB centered at 63.5 GHz and a -40 dB reverse isolation under a 1 V supply. The amplifier delivers 9 dBm and 13 dBm output power under 1 V and 1.5 V supplies, respectively and occupies a core chip area of 0.05 mm(2). The measurement results validate a high gain and area efficient power amplifier design methodology in deep-scaled CMOS for millimeter-wave communication system applications.
引用
收藏
页码:932 / 935
页数:4
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