Microscopic Mechanism of Doping-Induced Kinetically Constrained Crystallization in Phase-Change Materials

被引:55
|
作者
Lee, Tae Hoon [1 ]
Loke, Desmond [2 ]
Elliott, Stephen R. [1 ]
机构
[1] Univ Cambridge, Dept Chem, Cambridge CB2 1EW, England
[2] Singapore Univ Technol & Design, Dept Engn Prod Dev, Singapore 487372, Singapore
基金
英国工程与自然科学研究理事会;
关键词
GE2SB2TE5; FILMS; CHANGE MEMORY; NITROGEN; DYNAMICS;
D O I
10.1002/adma.201502295
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A comprehensive microscopic mechanism of doping-induced kinetically constrained crystallization in phase-change materials is provided by investigating structural and dynamical dopant characteristics via ab initio molecular dynamics simulations. The information gained from this study may provide a basis for a fast screening of dopant species for electronic memory devices, or for understanding the general physics involved in the crystallization of doped glasses.
引用
收藏
页码:5477 / 5483
页数:7
相关论文
共 50 条
  • [1] Anomalous crystallization kinetics of ultrafast ScSbTe phase-change memory materials induced by nitrogen doping
    Chen, Bin
    Chen, Yuanling
    Chen, Yimin
    Ding, Keyuan
    Wang, Dongqi
    Song, Tao
    Huang, Jiaen
    Rao, Feng
    ACTA MATERIALIA, 2022, 238
  • [2] Phase-change recording materials with a growth-dominated crystallization mechanism: A materials overview
    van Pieterson, L
    Lankhorst, MHR
    van Schijndel, M
    Kuiper, AET
    Roosen, JHJ
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (08)
  • [3] Phase-change recording materials with a growth-dominated crystallization mechanism: A materials overview
    Van Pieterson, L.
    Lankhorst, M.H.R.
    Van Schijndel, M.
    Kuiper, A.E.T.
    Roosen, J.H.J.
    Journal of Applied Physics, 2005, 97 (08):
  • [4] Electric field induced crystallization in phase-change materials for memory applications
    Kohary, Krisztian
    Wright, C. David
    APPLIED PHYSICS LETTERS, 2011, 98 (22)
  • [5] Microscopic origin of the fast crystallization ability of Ge–Sb–Te phase-change memory materials
    J. Hegedüs
    S. R. Elliott
    Nature Materials, 2008, 7 : 399 - 405
  • [6] Designing Multiple Crystallization in Superlattice-like Phase-Change Materials for Multilevel Phase-Change Memory
    Zheng, Long
    Song, Wenxiong
    Song, Zhitang
    Song, Sannian
    ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (49) : 45885 - 45891
  • [7] Microscopic origin of the fast crystallization ability of Ge-Sb-Te phase-change memory materials
    Hegedus, J.
    Elliott, S. R.
    NATURE MATERIALS, 2008, 7 (05) : 399 - 405
  • [8] Crystallization of growth-dominant eutectic phase-change materials
    Hurst, T
    Horie, M
    Khulbe, PK
    2000 OPTICAL DATA STORAGE, CONFERENCE DIGEST, 2000, : 77 - 79
  • [9] Simulation of re-crystallization in phase-change recording materials
    Nishi, Y
    Kando, H
    Terao, M
    OPTICAL DATA STORAGE 2001, 2001, 4342 : 88 - 93
  • [10] Influence of electron beam exposure on crystallization of phase-change materials
    Pandian, Ramanathaswamy
    Kooi, Bart J.
    De Hosson, Jeff Th. M.
    Pauza, Andrew
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (05)