Transient photoinduced voltage in hetero-structured polyimide Langmuir-Blodgett films

被引：2
|
作者：
Iwamoto, M
Xu, XB
机构：
[1] Department of Physical Electronics, Tokyo Institute of Technology, Tokyo 152, 2-12-1 O-okayama, Meguro-ku
来源：
THIN SOLID FILMS | 1996年 / 284卷
关键词：
photoinduced voltage; polyimide; heterostructures; Langmuir-Blodgett films;
D O I：
10.1016/S0040-6090(95)08484-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We developed a transient photoinduced voltage measuring system and then investigated the photoinduced electron transfer in heterostructured polyimide Langmuir-Blodgett films consisting of a polyimide of one type (PI) and a polyimide of another type containing a tetraphenylporphyrin moiety (PORPI). The photoinduced transient voltage depended on the PORPI layers (n), indicating that there are two kinds of electron transfer mechanism. For n exceeding 3, the maximum value of the induced transient voltage increases with n. We conclude that photoexcited electrons were transported in PORPI films at a distance of 2-4 nm.
引用
收藏
页码：936 / 938
页数：3
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