Photocatalytic activity of galvanically synthesized nanostructure SnO2 thin films

被引:27
|
作者
Jana, Sumanta [1 ]
Mitra, Bibhas Chandra [2 ]
Bera, Pulakesh [3 ]
Sikdar, Moushumi [1 ]
Mondal, Anup [1 ]
机构
[1] Bengal Engn & Sci Univ, Dept Chem, Howrah 711103, WB, India
[2] Bengal Engn & Sci Univ, Dept Phys, Howrah 711103, WB, India
[3] Panskura Banamali Coll, Dept Chem, Panskura 721152, WB, India
关键词
Thin films; Semiconductors; Nanostructure materials; Surfaces and interfaces; Electronic properties; Photocatalytic activity; NANOCRYSTALLINE SNO2; EFFICIENCY; NANOWIRES; NANORODS; DRIVEN; ZNO;
D O I
10.1016/j.jallcom.2014.02.182
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The study demonstrates an approach to synthesize nanostructure SnO2 thin films on TCO (transparent conducting oxide) coated glass substrates by galvanic technique. Aqueous solution of hydrated stannic chloride (SnCl4 center dot 5H(2)O) in potassium nitrate (KNO3) solution was used as the working solution. The process involves no sophisticated reactor or toxic chemicals, and proceeds continuously under ambient condition; it provides an economic way of synthesizing nanostructure SnO2 semiconductor thin films. The influence of sintering temperature on crystalline structure, morphology, electrical and dielectric properties has been studied. A detail analysis of I-V, C-V and dielectrics for annealed SnO2 thin films have been carried out. The morphological advantage i.e. nanoporous flake like structure allows more efficient transport of reactant molecules to the active interfaces and results a strong photocatalytic activity for degrading methyl orange (MO) dye. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:42 / 48
页数:7
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