Fabrication of Ru/Bi4-xLaxTi3O12/Ru ferroelectric capacitor structure using a Ru film deposited by metalorganic chemical vapor deposition

被引：0
|
作者：
Furukawa, T [1 ]
Kuroiwa, T [1 ]
Fujisaki, Y [1 ]
Sato, T [1 ]
Ishiwara, H [1 ]
机构：
[1] R&D Assoc Future Electron Devices, Midori Ku, Yokohama, Kanagawa 2268503, Japan
来源：
FERROELECTRIC THIN FILMS XII | 2004年 / 784卷
关键词：
D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A Ru/Bi4-xLaxTi3O12/Ru (Ru/BLT/Ru) capacitor structure with Ru top electrodes deposited by metalorganic chemical vapor deposition (MOCVD) was fabricated. On a Ru film deposited by MOCVD, BLT film was formed by a sol-gel method and crystallized in vacuum. Depositing a conformal Ru film on a BLT/Ru structure by MOCVD, Ru/BLT/Ru stack with smooth and flat surface was successfully formed. Then, ferroelectric Ru/BLT/Ru capacitors were fabricated through a dry etching process. It exhibited both good ferroelectric properties (2P(r)=16 muC/cm(2)) and low leakage current density (J=10(-7) A/cm(2)), suggesting that Ru film deposited by MOCVD showed sufficient properties for the tope electrode of Ru/BLT/Ru structures.
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页码：195 / 200
页数：6
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