Distributed Amplifier using Enhancement-mode AlGaN/GaN HEMTs

被引：0
|
作者：
Cheng, Zhiqun [1 ]
Zhou, Xiaopeng [1 ]
Chen, Kevin J. [2 ]
机构：
[1] Hangzhou Dianzi Univ, Key Lab RF Circuit & Syst, Hangzhou 310018, Zhejiang, Peoples R China
[2] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China
来源：
2008 INTERNATIONAL CONFERENCE ON COMMUNICATIONS, CIRCUITS AND SYSTEMS PROCEEDINGS, VOLS 1 AND 2: VOL 1: COMMUNICATION THEORY AND SYSTEM | 2008年
基金：
美国国家科学基金会;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Distributed amplifiers (DAs) using 1mm-gate enhancement-mode AlGaN/GaN HEMT were designed and fabricated. Design process and Simulation results of the DA are given. Simulation results show the input and output VSWR (voltage standing wave ratio) of less than 2, associated gain of more than 8.5dB and gain ripple of less than 1dB at frequency from 2GHz to 6GHz.
引用
收藏
页码：93 / 95
页数：3
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