Measure of Diracness in two-dimensional semiconductors

被引:27
|
作者
Goerbig, M. O. [1 ]
Montambaux, G. [1 ]
Piechon, F. [1 ]
机构
[1] Univ Paris 11, CNRS, UMR 8502, Phys Solides Lab, F-91405 Orsay, France
关键词
PHOTOLUMINESCENCE; PHASE; MOSE2;
D O I
10.1209/0295-5075/105/57005
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We analyze the low-energy properties of two-dimensional direct-gap semiconductors, such as, for example, the transition-metal dichalcogenides MoS2, WS2, and their diselenide analogues MoSe2, WSe2, etc., which are currently intensively investigated. In general, their electrons have a mixed character -they can be massive Dirac fermions as well as simple Schrodinger particles. We propose a measure (Diracness) for the degree of mixing between the two characters and discuss how this quantity can in principle be extracted experimentally, within magneto-transport measurements, and numerically via ab initio calculations. Copyright (C) EPLA, 2014
引用
收藏
页数:6
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