Morphology and structure of PZT films

被引：0
|
作者：
Silibin, M. V. [1 ]
Roschin, V. M. [1 ]
Yakovlev, V. B. [1 ]
Lovygina, M. S. [1 ]
机构：
[1] Tech Univ, Moscow State Inst Elect Technol, 4806-5 MIET, Moscow 124498, Russia
来源：
MICRO- AND NANOELECTRONICS 2005 | 2006年 / 6260卷
关键词：
D O I：
10.1117/12.677064
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
One of the important problem of transition from micro- to nanomeasure elements in modem electronics is the creation of dielectric layers with high permittivity and less than 200 run thickness. The opportunities of using titanium, hafnium, aluminium, silicon nitride, barium titanium, lead and strontium oxide are considered. One of the most promising directions is the usage of solid solutions of Ti-Zr films.
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页数：8
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