Acceptor compensation in (Sb,Y)-doped semiconducting Ba1-xSrxTiO3

The characteristics of semiconducting Ba1-xSrxTiO3 samples with different doping procedures were studied. Complex impedance-measurements were used to separate the resistances of grains R(b), and grain boundaries as R(gb). If was shown that excess donors added after calcination diffused into the grain bulk more slowly and could be compensted on the grain boundary by accepters, and thus samples with particularly low resistivity were obtained. Using an excess donor to compensate for the acceptor, a sample with room temperature resistivity of similar to 200 Ohm cm(-1) and greater than 7.8 orders of jumping of resistance was obtained.