Growth behavior of epitaxial semiconductor axial nanowire heterostructures

被引：0

作者：

Zou, J. ^{[1
,2
]}

Paladugu, M. ^{[1
]}

Guo, Y. N. ^{[1
]}

Zhang, X. ^{[1
]}

Auchterlonie, G. J. ^{[2
]}

Joyce, H. J. ^{[3
]}

Gao, Q. ^{[3
]}

Tan, H. H. ^{[3
]}

Jagadish, C. ^{[3
]}

Kim, Y. ^{[4
]}

机构：

[1] Univ Queensland, Sch Engn, St Lucia, Qld 4072, Australia

[2] Univ Queensland, Ctr Microscopy & Microanalysis, St Lucia, Qld 4072, Australia

[3] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

[4] Dong A Univ, Dept Phys, Busan 604-714, South Korea

来源：

COMMAD: 2008 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS & DEVICES | 2008年

基金：

澳大利亚研究理事会;

关键词：

nanowires; Crystal Growth; vapor-liquid-solid; heterostructues; epitaxy; nucleation and growth;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we demonstrate the key issues of axial nanowire heterostructures, such as, the fundamental criteria for formation and failure of axial nanowire heterostructures via vapor-liquid-solid mechanism and lateral misfit strain relaxation in these structures. We show the failure of axial nanowire heterostructures by growing InAs axially on GaAs nanowires, and the lateral misfit strain relaxation by axial growth of GaSb on GaAs nanowires.

引用

页码：71 / +

页数：2

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