Characterization results of 1k x 1k charge multiplying CCD image sensor

The paper describes several important characterization results obtained from the recently developed high performance front side illuminated 1k x 1k Virtual Phase Frame Transfer CCD image sensor that employs charge multiplication concept to multiply photo generated charge directly in charge domain. Charge is multiplied in a specially designed highspeed serial register before reaching a standard charge detection node where it is converted into a voltage. The description includes the key device design features that were instrumental in obtaining the high performance of the imager and then focuses on the key characterization parameters such as excess noise and the carrier distribution function of the charge multiplication process. The remaining focus of the article is on the characterization methodology used in testing and on the obtained results such as the CTE at high clocking frequency (35 MHz), low serial register clock voltage operation, high sensitivity at low light levels, high QE, anti-blooming performance of Lateral Overflow Drain, and dark current at various operating conditions. In conclusion, several imaging comparisons between the conventional state of the art CCD image sensor and the developed charge-multiplying image sensor are also shown.