Bottom-Up Molecular Tunneling Junctions Formed by Self-Assembly

被引:31
|
作者
Zhang, Yanxi [1 ,2 ]
Zhao, Zhiyuan [1 ,2 ]
Fracasso, Davide [1 ,2 ]
Chiechi, Ryan C. [1 ,2 ]
机构
[1] Univ Groningen, Stratingh Inst Chem, NL-9747 AG Groningen, Netherlands
[2] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands
基金
欧洲研究理事会;
关键词
molecular devices; molecular tunneling junctions; self-assembly; structure-activity relationships; surface analysis; CURRENT-VOLTAGE CHARACTERISTICS; FIELD-EFFECT TRANSISTORS; GALLIUM-INDIUM EGAIN; ELECTRON-TRANSPORT; CHARGE-TRANSPORT; METAL JUNCTIONS; SOLID-STATE; LIQUID-METAL; ALKANETHIOL MONOLAYERS; QUANTUM INTERFERENCE;
D O I
10.1002/ijch.201400033
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
This Minireview focuses on bottom-up molecular tunneling junctions - a fundamental component of molecular electronics - that are formed by self-assembly. These junctions are part of devices that, in part, fabricate themselves, and therefore, are particularly dependent on the chemistry of the molecules selected. The discussion covers the history of these junctions as well as recent advances. It is broken into the broad categories of conformal and rigid contacts, which place different constraints on the molecules used to form the junctions. The intention of this Minireview is to give an overview of research efforts in molecular electronics that is targeted at chemists, whose efforts are playing an increasingly important role in molecular electronics.
引用
收藏
页码:513 / 533
页数:21
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