Growth and characterization of Si-doped β-Ga2O3 films by pulsed laser deposition

被引：34
|
作者：
Xu, C. X. [1 ]
Liu, H. [1 ]
Pan, X. H. [1 ]
Ye, Z. Z. [1 ]
机构：
[1] Zhejiang Univ, Sch Mat Sci & Engn, Cyrus Tang Ctr Sensor Mat & Applicat, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
OPTICAL MATERIALS | 2020年 / 108卷
基金：
中国国家自然科学基金;
关键词：
Physical vapor deposition; Epitaxial growth; Thin films; Structural; SURFACE-MORPHOLOGY;
D O I：
10.1016/j.optmat.2020.110145
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
((2) over bar 01) oriented Si-doped beta-Ga2O3 films were grown on (0001) sapphire substrates with different SiO2 content in the targets by pulsed laser deposition (PLD). A carrier density of 8.3 x 10(18) cm(-3) and a Hall mobility of 0.07 cm(2) V(1)s(1) have been observed for film grown with 1.5 wt % SiO2 content in the target. Optical transmission spectra show that all the films have high visible region transmittance. Our work shows that PLD is an effective technique for growing conductive Si-doped beta-Ga2O3 films.
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition
    Leedy, Kevin D.
    Chabak, Kelson D.
    Vasilyev, Vladimir
    Look, David C.
    Boeckl, John J.
    Brown, Jeff L.
    Tetlak, Stephen E.
    Green, Andrew J.
    Moser, Neil A.
    Crespo, Antonio
    Thomson, Darren B.
    Fitch, Robert C.
    McCandless, Jonathan P.
    Jessen, Gregg H.
    [J]. APPLIED PHYSICS LETTERS, 2017, 111 (01)
  • [2] Conducting Si-doped γ-Ga2O3 epitaxial films grown by pulsed-laser deposition
    Oshima, Takayoshi
    Matsuyama, Keitaro
    Yoshimatsu, Kohei
    Ohtomo, Akira
    [J]. JOURNAL OF CRYSTAL GROWTH, 2015, 421 : 23 - 26
  • [3] Si content variation and influence of deposition atmosphere in homoepitaxial Si-doped β-Ga2O3 films by pulsed laser deposition
    Leedy, Kevin D.
    Chabak, Kelson D.
    Vasilyev, Vladimir
    Look, David C.
    Mahalingam, Krishnamurthy
    Brown, Jeff L.
    Green, Andrew J.
    Bowers, Cynthia T.
    Crespo, Antonio
    Thomson, Darren B.
    Jessen, Gregg H.
    [J]. APL MATERIALS, 2018, 6 (10):
  • [4] Electrical properties of Si doped Ga2O3 films grown by pulsed laser deposition
    Fabi Zhang
    Katsuhiko Saito
    Tooru Tanaka
    Mitsuhiro Nishio
    Qixin Guo
    [J]. Journal of Materials Science: Materials in Electronics, 2015, 26 : 9624 - 9629
  • [5] Electrical properties of Si doped Ga2O3 films grown by pulsed laser deposition
    Zhang, Fabi
    Saito, Katsuhiko
    Tanaka, Tooru
    Nishio, Mitsuhiro
    Guo, Qixin
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2015, 26 (12) : 9624 - 9629
  • [6] Post-annealing effects on Si-doped Ga2O3 photodetectors grown by pulsed laser deposition
    Jeong, Sang Ha
    Thi Kim Oanh Vu
    Kim, Eun Kyu
    [J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 877
  • [7] Post-annealing effects on Si-doped Ga2O3 photodetectors grown by pulsed laser deposition
    Jeong, Sang Ha
    Vu, Thi Kim Oanh
    Kim, Eun Kyu
    [J]. Journal of Alloys and Compounds, 2021, 877
  • [8] Cathodoluminescence of undoped and Si-doped ε-Ga2O3 films
    Montedoro, V
    Torres, A.
    Dadgostar, S.
    Jimenez, J.
    Bosi, M.
    Parisini, A.
    Fornari, R.
    [J]. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2021, 264
  • [9] MOCVD growth and characterization of conductive homoepitaxial Si-doped Ga2O3
    Hernandez, Armando
    Islam, Md Minhazul
    Saddatkia, Pooneh
    Codding, Charles
    Dulal, Prabin
    Agarwal, Sahil
    Janover, Adam
    Novak, Steven
    Huang, Mengbing
    Dang, Tuoc
    Snure, Mike
    Selim, F. A.
    [J]. RESULTS IN PHYSICS, 2021, 25
  • [10] Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition
    Zhang, Fabi
    Arita, Makoto
    Wang, Xu
    Chen, Zhengwei
    Saito, Katsuhiko
    Tanaka, Tooru
    Nishio, Mitsuhiro
    Motooka, Teruaki
    Guo, Qixin
    [J]. APPLIED PHYSICS LETTERS, 2016, 109 (10) : 100 - 104
12345