Metal-insulator transition in a generalized Hubbard model with bond-charge interaction

被引：1
|
作者：
Sun, T
机构：
来源：
PHILOSOPHICAL MAGAZINE LETTERS | 1996年 / 73卷 / 04期
关键词：
D O I：
10.1080/095008396180849
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The metal-insulator transition in a generalized Hubbard model with bond-charge interaction has been studied by means of the auxiliary field technique. The system exhibits both the conventional Mott-Hubbard transition, characterized by a continuous change in the number of current carriers, and a novel first-order metal-insulator transition owing to the bond-charge interaction, at which there is a discontinuity in the number of current carriers. The phase diagram in the parameter space spanned by the effective kinetic energy and the effective bond-charge interaction is presented for the three-dimensional case.
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页码：201 / 208
页数：8
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