Structural, Electrical, and Ferroelectric Properties of Nb-Doped Na0.5Bi4.5Ti4O15 Thin Films

被引：6
|
作者：
Raghavan, Chinnambedu Murugesan [1 ]
Kim, Jin Won [1 ]
Kim, Sang Su [1 ]
机构：
[1] Changwon Natl Univ, Dept Phys, Chang Won 641773, Gyeongnam, South Korea
来源：
JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2015年 / 98卷 / 10期
基金：
新加坡国家研究基金会;
关键词：
BISMUTH TITANATE; RAMAN-SCATTERING; ENHANCEMENT; CRYSTALLIZATION; POLARIZATION; NEODYMIUM; OXIDES;
D O I：
10.1111/jace.13744
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Ferroelectric Na0.5Bi4.5Ti4O15 (NaBTi) and donor Nb-doped Na0.5Bi4.5Ti3.94Nb0.06O15 (NaBTiNb) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates using a chemical solution deposition method. The doping with Nb5+-ions leads to tremendous improvements in the ferroelectric properties of the NaBTiNb thin film. Room-temperature ferroelectricity with a large remnant polarization (2P(r)) of 64.1C/cm(2) and a low coercive field (2E(c)) of 165kV/cm at an applied electric field of 475kV/cm was observed for the NaBTiNb thin film. The polarization fatigue study revealed that the NaBTiNb thin film exhibited good fatigue endurance compared with the NaBTi thin film. Furthermore, the NaBTiNb thin film showed a low leakage current density, which was 1.48x10(-6)A/cm(2) at an applied electric field of 100kV/cm.
引用
收藏
页码：3153 / 3158
页数：6
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