Dielectric and ferroelectric properties of BaBi4Ti4O15 ceramics and their dependence on lattice structure

被引：4
|
作者：
Li, ZF [1 ]
Zhong, WL
Qiu, ZP
Ge, HL
Zhang, PL
Wang, CL
机构：
[1] China Inst Metrol, Fac Appl Phys, Hangzhou 310018, Peoples R China
[2] Shandong Univ, State Key Lab Crystal Mat, Sch Phys & Microelect, Jinan 250100, Peoples R China
来源：
ACTA PHYSICA SINICA | 2004年 / 53卷 / 09期
关键词：
ferroelectricity; permitivity; lattice structure; sol-gel method;
D O I：
10.7498/aps.53.3200
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Good quality barium bismuth titanate (BaBi4TiO15) ceramics is fabricated successfully with BaBi4Ti4O15 nano-powders prepared by Sol - Gel process. The ferroelectric to paraelectric phase transition of barium bismuth titanate ceramics was studied by determining the dielectric and saturated ferroelectric properties of barium bismuth titanate. All measurements show barium bismuth titanate may be a kind of order-disordered relaxor ferroelectrics with a diffused phase transition which is a first-ordered one, and its dielectric and saturated ferroelectric properties depended strongly on its lattice structure.
引用
收藏
页码：3200 / 3204
页数：5
相关论文
共 16 条
  • [1] FERROELECTRICITY IN COMPOUND BA2BI4TI5O18
    AURIVILLIUS, B
    FANG, PH
    [J]. PHYSICAL REVIEW, 1962, 126 (03): : 893 - &
  • [2] Cation disorder in ferroelectric Aurivillius phases of the type Bi(2)ANb(2)O(9) (A=Ba, Sr, Ca)
    Blake, SM
    Falconer, MJ
    McCreedy, M
    Lightfoot, P
    [J]. JOURNAL OF MATERIALS CHEMISTRY, 1997, 7 (08) : 1609 - 1613
  • [3] The crystal structure of BaBi4Ti4O15
    Fuentes, ME
    Mehta, A
    Lascano, L
    Camacho, H
    Chianelli, R
    Fernández, JF
    Fuentes, L
    [J]. FERROELECTRICS, 2002, 269 : 159 - 164
  • [4] Nanoscale switching and domain structure of ferroelectric BaBi4Ti4O15 thin films
    Harnagea, C
    Pignolet, A
    Alexe, M
    Satyalakshmi, KM
    Hesse, D
    Gösele, U
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (11A): : L1255 - L1257
  • [5] Electrical properties of a bismuth layer-structured Ba2Bi4Ti5O18 single crystal
    Irie, H
    Miyayama, M
    Kudo, T
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2000, 83 (11) : 2699 - 2704
  • [6] KIM SK, 1994, NIPPON SERAM KYO GAK, V102, P722, DOI 10.2109/jcersj.102.722
  • [7] Dielectric relaxor properties of K0.5Bi0.5TiO3 ferroelectrics prepared by sol-gel method
    Li, ZF
    Wang, CL
    Zhong, WL
    Li, JC
    Zhao, ML
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 94 (04) : 2548 - 2552
  • [8] Piezoelectric and mechanical properties of BaBi4Ti4O15/Ba4Ti13O30 ceramics
    Nakai, Y
    Fukuoka, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (9B): : 5568 - 5571
  • [9] Orientation dependence of ferroelectricity in pulsed-laser-deposited epitaxial bismuth-layered perovskite thin films
    Pignolet, A
    Schäfer, C
    Satyalakshmi, KM
    Harnagea, C
    Hesse, D
    Gösele, U
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2000, 70 (03): : 283 - 291
  • [10] BaBi4Ti4O15 ferroelectric thin films grown by pulsed laser deposition
    Satyalakshmi, KM
    Alexe, M
    Pignolet, A
    Zakharov, ND
    Harnagea, C
    Senz, S
    Hesse, D
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (04) : 603 - 605
12