Size and ternary mixed crystal effects on interband absorption in wurtzite ZnO/MgxZn1-xO quantum wells

被引:4
|
作者
Gu Zhuo [1 ]
Ban Shi-Liang [1 ]
机构
[1] Inner Mongolia Univ, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China
基金
中国国家自然科学基金;
关键词
ZnO/MgxZn1-xO quantum well; interband optical absorption; ternary mixed crystal effect; size effect; OPTICAL-PROPERTIES; ZNO;
D O I
10.7498/aps.63.107301
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Adopting a numerical method of solving self-consistently the Schrodinger equation and Poisson equation, the eigen-states and eigenenergies of electrons (holes) in a two-dimensional electron-hole gas are obtained for wurtzite asymmetric ZnO/MgxZn1-xO single quantum wells (QWs). In our computation, a realistic heterostructure potential is used, in which the influences from energy band bending, material doping and the built-in electric field induced by spontaneous and piezoelectric polarizations are taken into account. Furthermore, based on the Fermi's golden rule, the optical absorptions of electronic interband transitions in QWs, and their size and ternary mixed crystal effects are discussed. The results indicate that the increase of the Mg component in MgxZn1-xO enhances the build-in electric field, which forces electrons (holes) to approach to the left (right) barrier. This causes the interband transition absorption peak to decrease exponentially and to be blue-shifted. For different widths of QWs, the calculated results show that absorption peak decreases and transition energy shows a red shift with the increase of well width. The above conclusions are expected to give a theoretical guidance for improving the opto-electronic properties of materials and devices made of heterostructures with suitable optical absorption spectra and wave lengths.
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页数:6
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共 28 条
  • [1] Temperature stability of intersubband transitions in AlN/GaN quantum wells
    Berland, Kristian
    Stattin, Martin
    Farivar, Rashid
    Sultan, D. M. S.
    Hyldgaard, Per
    Larsson, Anders
    Wang, Shu Min
    Andersson, Thorvald G.
    [J]. APPLIED PHYSICS LETTERS, 2010, 97 (04)
  • [2] Built-in electric field effect on the linear and nonlinear intersubband optical absorptions in InGaN strained single quantum wells
    Chi, Yue-meng
    Shi, Jun-jie
    [J]. JOURNAL OF LUMINESCENCE, 2008, 128 (11) : 1836 - 1840
  • [3] Suppression of the internal electric field effects in ZnO/Zn0.7Mg0.3O quantum wells by ion-implantation induced intermixing
    Davis, J. A.
    Dao, L. V.
    Wen, X.
    Ticknor, C.
    Hannaford, P.
    Coleman, V. A.
    Tan, H. H.
    Jagadish, C.
    Koike, K.
    Sasa, S.
    Inoue, M.
    Yano, M.
    [J]. NANOTECHNOLOGY, 2008, 19 (05)
  • [4] Effects of Mg Incorporation on Microstructure and Optical Properties of ZnO Thin Films Prepared by Sol-gel Method
    Ding, Rui
    Xu, Chunxiang
    Gu, Baoxiang
    Shi, Zengliang
    Wang, Haitao
    Ba, Long
    Xiao, Zhongdang
    [J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2010, 26 (07) : 601 - 604
  • [5] Doyeol A, 2006, J SEMICOND TECH SCI, V6, P125
  • [6] Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well
    Fan, WJ
    Abiyasa, AP
    Tan, ST
    Yu, SF
    Sun, XW
    Xia, JB
    Yeo, YC
    Li, MF
    Chong, TC
    [J]. JOURNAL OF CRYSTAL GROWTH, 2006, 287 (01) : 28 - 33
  • [7] Ha S H, 2007, J INNER MONGOLIA U N, V38, P272
  • [8] Management of light-trapping effect for a-Si:H/μc-Si:H tandem solar cells using novel substrates, based on MOCVD ZnO and etched white glass
    Janthong, Bancha
    Moriya, Yuki
    Hongsingthong, Aswin
    Sichanugrist, Porponth
    Konagai, Makoto
    [J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2013, 119 : 209 - 213
  • [9] Relationship between ultraviolet emission and electron concentration of ZnO thin films
    Kang, Hong Seong
    Kim, Gun Hee
    Lim, Sung Hoon
    Chang, Hyun Woo
    Kim, Jong Hoon
    Lee, Sang Yeol
    [J]. THIN SOLID FILMS, 2008, 516 (10) : 3147 - 3151
  • [10] PHOTOLUMINESCENCE CHARACTERISTICS OF ALGAN-GAN-ALGAN QUANTUM-WELLS
    KHAN, MA
    SKOGMAN, RA
    VANHOVE, JM
    KRISHNANKUTTY, S
    KOLBAS, RM
    [J]. APPLIED PHYSICS LETTERS, 1990, 56 (13) : 1257 - 1259