Large grain Cu(In,Ga)Se2 thin film growth using a Se-radical beam source

被引：22

作者：

Ishizuka, Shogo ^{[1
]}

Yamada, Akimasa ^{[1
]}

Shibata, Hajime ^{[1
]}

Fons, Paul ^{[1
]}

Sakurai, Keiichiro ^{[1
]}

Matsubara, Koji ^{[1
]}

Niki, Shigeru ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2009年 / 93卷 / 6-7期

关键词：

Cu(In; Ga)Se-2; CIS; CIGS; CGS; Thin film; Se-radical source; SOLAR-CELLS; TEMPERATURE; DEVICES;

D O I：

10.1016/j.solmat.2008.09.043

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Cu(In,Ga)Se-2 (CIGS) thin films were grown by the three-stage process using a rf-plasma cracked Se-radical beam source. CuGaSe2 (CGS) films grown at a maximum substrate temperature of 550 degrees C and CuInSe2 (CIS) and CIGS films grown at the lower temperature of 400 degrees C exhibited highly dense surfaces and large grain size compared with films grown using a conventional Se-evaporative source. This result is attributed to the modification of the growth kinetics due to the presence of active Se-radical species and enhanced surface migration during growth. The effect on CIGS film properties and solar cell performance has been investigated. Enhancements in the cell efficiencies of 400 degrees C-grown CIS and CIGS solar cells have been demonstrated using a Se-radical source. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：792 / 796

页数：5

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