Electronic transition responsible for size-dependent photoluminescence of colloidal CuInS2 quantum dots

被引：58

作者：

Omata, Takahisa ^{[1
]}

Nose, Katsuhiro ^{[1
]}

Kurimoto, Kohta ^{[1
]}

Kita, Masao ^{[1
,2
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Div Mat & Mfg Sci, Suita, Osaka 5650871, Japan

[2] Toyama Natl Coll Technol, Dept Ecomat Engn, Toyama 9398630, Japan

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2014年 / 2卷 / 33期

基金：

日本学术振兴会;

关键词：

SEMICONDUCTOR NANOCRYSTALS; NANOPARTICLES; LUMINESCENT; NONINJECTION;

D O I：

10.1039/c4tc01144a

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Colloidal CuInS2 quantum dots with an average size of 2.9-4.1 nm were synthesized by the one-pot heating of an organometallic solution. The size-dependent optical gaps and photoluminescence (PL) emission energies were analyzed based on the finite-depth well effective mass approximation. The PL emission was attributed to the recombination of electrons in the donor level and holes in the quantized hole state. Indium atom defects at copper sites or sulfur vacancies were proposed to be the defects acting as donors at similar to 0.1 eV below the conduction band.

引用

页码：6867 / 6872

页数：6

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