Free-standing and overgrown InGaAs/GaAs nanotubes, nanohelices and their arrays

被引：664
|
作者：
Prinz, VY [1 ]
Seleznev, VA [1 ]
Gutakovsky, AK [1 ]
Chehovskiy, AV [1 ]
Preobrazhenskii, VV [1 ]
Putyato, MA [1 ]
Gavrilova, TA [1 ]
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia
来源：
PHYSICA E | 2000年 / 6卷 / 1-4期
基金：
俄罗斯基础研究基金会;
关键词：
nanotubes; GaAs; InAs;
D O I：
10.1016/S1386-9477(99)00249-0
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The possibility is shown to fabricate a wide class of free-standing nano-objects based on few monolayers thick scrolled heterostructures. Using an ultra-thin film (1 ML GaAs:1 ML InAs), nanotubes with an inside diameter of approximate to 2 nm have been obtained, which constitutes the limiting size for this system. Molecular-beam-expitaxy overgrown structures with nanotubes embedded into GaAs have been obtained. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：828 / 831
页数：4
相关论文
共 50 条
  • [1] Free-standing and overgrown InGaAs/GaAs nanotubes: fabrication, potential applications
    Prinz, VY
    Seleznev, VA
    Gutakovsky, AK
    Chehovskiy, AV
    Preobrazenskii, VV
    Putyato, MA
    Nenasheva, LA
    COMPOUND SEMICONDUCTORS 1999, 2000, (166): : 199 - 202
  • [2] Optical studies of free-standing single InGaAs/GaAs quantum dots
    Forchel, A
    Steffen, R
    Koch, T
    Michel, M
    Albrecht, M
    Reinecke, TL
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (11) : 1529 - 1533
  • [3] Optical studies of free-standing single InGaAs/GaAs quantum dots
    Univ Murzburg, Wurzburg, Germany
    Semicond Sci Technol, 11 S (1529-1533):
  • [4] Residual strain in free-standing CdTe nanowires overgrown with HgTe
    Kessel, Maximilian
    Lunczer, Lukas
    Tarakina, Nadezda V.
    Brune, Christoph
    Buhmann, Hartmut
    Molenkamp, Laurens W.
    APPLIED PHYSICS LETTERS, 2019, 114 (15)
  • [5] Perfect absorption in free-standing GaAs nanocylinder arrays by degenerate critical coupling
    Chen, Wenya
    Wang, Xing
    Duan, Junyi
    Zhou, Chaobiao
    Liu, Tingting
    Xiao, Shuyuan
    OPTICAL MATERIALS, 2021, 121
  • [6] Free-standing GaN grown on epitaxial lateral overgrown GaN substrates
    Martinez-Criado, G
    Kuball, M
    Benyoucef, M
    Sarua, A
    Frayssinet, E
    Beaumont, B
    Gibart, P
    Miskys, CR
    Stutzmann, M
    JOURNAL OF CRYSTAL GROWTH, 2003, 255 (3-4) : 277 - 281
  • [7] Exciton interaction effects in the emission spectra of single free-standing InGaAs/GaAs quantum dots
    Universitaet Wuerzburg, Wuerzburg, Germany
    Surf Sci, 1600, 1-3 (805-809):
  • [8] Exciton interaction effects in the emission spectra of single free-standing InGaAs/GaAs quantum dots
    Steffen, R
    Koch, T
    Oshinowo, J
    Faller, F
    Forchel, A
    SURFACE SCIENCE, 1996, 361 (1-3) : 805 - 809
  • [9] In-plane strain distribution in free-standing GaAs/InGaAs/GaAs single quantum well surface nanostructures on GaAs[001]
    Ulyanenkov, A
    Baumbach, T
    Darowski, N
    Pietsch, U
    Wang, KH
    Forchel, A
    Wiebach, T
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (03) : 1524 - 1530
  • [10] Epitaxial Fe on free-standing GaAs nanowires
    Yang, Mingze
    Darbandi, Ali
    Majumder, Sarmita
    Watkins, Simon
    Kavanagh, Karen
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016, 31 (07)
12345