An amorphous oxide semiconductor thin-film transistor route to oxide electronics

被引：149
|
作者：
Wager, John F. [1 ]
Yeh, Bao [1 ]
Hoffman, Randy L. [2 ]
Keszler, Douglas A. [3 ]
机构：
[1] Oregon State Univ, Sch EECS, Corvallis, OR 97331 USA
[2] Hewlett Packard Corp, Corvallis, OR 97330 USA
[3] Oregon State Univ, Dept Chem, Corvallis, OR 97331 USA
来源：
CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE | 2014年 / 18卷 / 02期
基金：
美国国家科学基金会;
关键词：
Oxide electronics; Amorphous oxide semiconductor (AOS); Thin-film transistor (TFT); Flat-panel displays; Indium gallium zinc oxide (IGZO); Active-matrix liquid crystal display (AMLCD); Active-matrix organic light-emitting diode (AMOLED); INSTABILITY; TFT;
D O I：
10.1016/j.cossms.2013.07.002
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) invented only one decade ago are now being commercialized for active-matrix liquid crystal display (AMLCD) backplane applications. They also appear to be well positioned for other flat-panel display applications such as active-matrix organic light-emitting diode (AMOLED) applications, electrophoretic displays, and transparent displays. The objectives of this contribution are to overview AOS materials design; assess indium gallium zinc oxide (IGZO) TFTs for AMLCD and AMOLED applications; identify several technical topics meriting future scrutiny before they can be confidently relied upon as providing a solid scientific foundation for underpinning AOS TFT technology; and briefly speculate on the future of AOS TFTs for display and non-display applications. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：53 / 61
页数：9
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