Real-space method for first-principles electron transport calculations: Self-energy terms of electrodes for large systems

被引:9
|
作者
Ono, Tomoya [1 ,2 ]
Tsukamoto, Shigeru [3 ,4 ,5 ]
机构
[1] Univ Tsukuba, Ctr Computat Sci, Tsukuba, Ibaraki 3058577, Japan
[2] JST PRESTO, Kawaguchi, Saitama 3320012, Japan
[3] Forschungszentrum Julich, Peter Grunberg Inst, D-52425 Julich, Germany
[4] Forschungszentrum Julich, Inst Adv Simulat, D-52425 Julich, Germany
[5] JARA, D-52425 Julich, Germany
关键词
GENERALIZED GRADIENT APPROXIMATION; PSEUDOPOTENTIAL METHOD; EXCHANGE; FIELD; SI;
D O I
10.1103/PhysRevB.93.045421
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a fast and stable numerical technique to obtain the self-energy terms of electrodes for first-principles electron transport calculations. Although first-principles calculations based on the real-space finite-difference method are advantageous for execution on massively parallel computers, large-scale transport calculations are hampered by the computational cost and numerical instability of the computation of the self-energy terms. Using the orthogonal complement vectors of the space spanned by the generalized Bloch waves that actually contribute to transport phenomena, the computational accuracy of transport properties is significantly improved with a moderate computational cost. To demonstrate the efficiency of the present technique, the electron transport properties of a Stone-Wales (SW) defect in graphene and silicene are examined. The resonance scattering of the SW defect is observed in the conductance spectrum of silicene since the sigma* state of silicene lies near the Fermi energy. In addition, we found that one conduction channel is sensitive to a defect near the Fermi energy, while the other channel is hardly affected. This characteristic behavior of the conduction channels is interpreted in terms of the bonding network between the bilattices of the honeycomb structure in the formation of the SW defect. The present technique enables us to distinguish the different behaviors of the two conduction channels in graphene and silicene owing to its excellent accuracy.
引用
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页数:10
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