Subband structure and magneto-conductivity of InAs-MIS inversion layers

被引：2

作者：

Tsuji, Y ^{[1
]}

Okamoto, T ^{[1
]}

机构：

[1] Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 22卷 / 1-3期

关键词：

InAs; subband structure; positive magneto-conductivity; negative magneto-resistance; hall-bar;

D O I：

10.1016/j.physe.2003.12.025

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have investigated magneto-transport in an inversion layer of InAs. At low perpendicular magnetic fields, we observed negative magneto-conductivity due to the spin-orbit interaction. The negative B perpendicular to-dependence of conductivity vanishes in a strong parallel magnetic field. The magneto-conductivity in the parallel magnetic field (B perpendicular to = 0) is negative at low-magnetic fields, but it turns to positive at 1-2 T. While the electron-concentration dependence suggests that the positive magneto-conductivity is related to the subband structure, the present theory cannot explain the positive magneto-conductivity. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：377 / 380

页数：4

共 22 条

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