Effect of the a-SiC:H thickness in the conduction mechanisms of a-SiC:H/c-Si heterojunction diodes

被引：0
|
作者：
Cabré, R [1 ]
Pallarès, J [1 ]
Marsal, LF [1 ]
机构：
[1] Univ Rovira & Virgili, Dept Elect Engn, Tarragona 43007, Spain
来源：
2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2 | 2004年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The conduction mechanisms governing the dark current-voltage characteristics of a-SiC:H/a-Si:H/c-Si pin heterojunction diodes are determined by the use of an electrical model. In particular, the influence of the a-SiC:H thickness layer on the conduction mechanisms is studied. For a 5 nm thick a-SiC:H layer, the conduction mechanisms of the heterojunction diode are the same than a homojunction Silicon diode.
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页码：287 / 290
页数：4
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