Gallenene epitaxially grown on Si(111)

被引：40

作者：

Tao, Min-Long ^{[1
]}

Tu, Yu-Bing ^{[1
]}

Sun, Kai ^{[1
]}

Wang, Ya-Li ^{[1
]}

Xie, Zheng-Bo ^{[1
]}

Liu, Lei ^{[1
]}

Shi, Ming-Xia ^{[1
]}

Wang, Jun-Zhong ^{[1
]}

机构：

[1] Southwest Univ, Sch Phys Sci & Technol, Chongqing, Peoples R China

来源：

2D MATERIALS | 2018年 / 5卷 / 03期

基金：

中国国家自然科学基金;

关键词：

gallenene; Ga monolayer; STM; Si(111); TRANSITION-METAL DICHALCOGENIDES; TOTAL-ENERGY CALCULATIONS; AUGMENTED-WAVE METHOD; GA THIN-FILMS; SILICON SURFACE; BASIS-SET; GERMANENE; OPTOELECTRONICS; INCOMMENSURATE; GALLIUM;

D O I：

10.1088/2053-1583/aaba3a

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Gallenene, an analogue of graphene composed of gallium, is epitaxially grown on Si(111) surface and studied by low temperature scanning tunneling microscopy (LT-STM). The STM images display that the buffer layer has a 4 x root 13 superstructure with respect to the substrate lattice and the gallenene layer has a hexagonal honeycomb structure. The scanning tunneling spectra (STS) of the gallenene show that it behaves as a metallic layer. First-principles calculations give the proposed configuration. Our results provide a method to synthesize the gallenene and shed important light on the growth mechanism of it.

引用

页数：5

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