Gate-tunable Kerr nonlinearity of graphene in the mid-infrared

被引：0

作者：

Patwardhan, Gauri ^{[1
,2
]}

Jadidi, M. Mehdi ^{[2
]}

Lee, Brian S. ^{[3
]}

Datta, Ipshita ^{[3
]}

Ginsberg, Jared S. ^{[2
]}

Chen, Cecilia Y. ^{[3
]}

Lipson, Michal ^{[2
,3
]}

Gaeta, Alexander L. ^{[2
,3
]}

机构：

[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

[2] Columbia Univ, Dept Appl Phys & Appl Math, New York, NY 10027 USA

[3] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

来源：

2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2020年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We measure the nonlinear refractive index n(2), two -photon absorption coefficient, and hot-electron nonlinearity of gated graphene in the mid-IR regime. Our results show that both the magnitude and sign of n(2) can be voltage-controlled. (C) 2020 The Author(s)

引用

页数：2

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