III-V on silicon avalanche photodiodes by heteroepitaxy

被引：20
|
作者：
Yuan, Yuan [1 ]
Jung, Daehwan [2 ,3 ]
Sun, Keye [1 ]
Zheng, Jiyuan [1 ]
Jones, Andrew H. [1 ]
Bowers, John E. [2 ]
Campbell, Joe C. [1 ]
机构：
[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[3] Korea Inst Sci & Technol, Ctr Optoelect Mat & Devices, Seoul 02792, South Korea
来源：
OPTICS LETTERS | 2019年 / 44卷 / 14期
关键词：
Epitaxial growth - Semiconducting indium phosphide - Gallium compounds - Indium phosphide - III-V semiconductors - Silicon;
D O I：
10.1364/OL.44.003538
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We demonstrate a III-V avalanche photodiode (APD) grown by heteroepitaxy on silicon. This InGaAs/InAlAs APD exhibits low dark current, gain >20, external quantum efficiency >40%, and similar low excess noise, k similar to 0.2 as InAlAs APDs on InP. (C) 2019 Optical Society of America
引用
收藏
页码：3538 / 3541
页数：4
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