Characterisation of Ni and Ni/Ti contact on n-type 4H-SiC

被引：11
|
作者：
Siad, M. [1 ]
Vargas, C. Pineda [2 ]
Nkosi, M. [2 ]
Saidi, D. [1 ]
Souami, N. [1 ]
Daas, N. [1 ]
Chami, A. C. [3 ]
机构：
[1] Ctr Rech Nucl Alger, Algiers, Algeria
[2] iThemba Labs, Mat Res Grp, Cape Town, South Africa
[3] USTHB, Fac Phys, Bab Ezzouar, Alger, Algeria
来源：
APPLIED SURFACE SCIENCE | 2009年 / 256卷 / 01期
关键词：
SiC; Ohmic contacts; Nickel; Titanium; RBS; XRD; AES; SILICON-CARBIDE; OHMIC CONTACT; SCHOTTKY; FILM; TITANIUM; SEMICONDUCTOR; DIODES;
D O I：
10.1016/j.apsusc.2009.08.011
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this work, we report on the structural characterisation of Ni and Ni/Ti bilayer contacts on n-type 4H-SiC. The redistribution of carbon, after annealing, in the Ni/SiC and the Ni/Ti/SiC contacts is particularly studied by RBS at 3.2 MeV, XRD and AES techniques. (C) 2009 Elsevier B. V. All rights reserved.
引用
收藏
页码：256 / 260
页数：5
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