Atomic force microscope tip-induced anodization of titanium film for nanofabrication of oxide patterns

被引:33
|
作者
Huh, C
Park, SJ [1 ]
机构
[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea
[2] Kwangju Inst Sci & Technol, Ctr Elect Mat Res, Kwangju 500712, South Korea
来源
关键词
D O I
10.1116/1.591150
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Nanometer-scale oxide patterns were fabricated on Ti films deposited on Si(100) surface by means of atomic force microscope tip-induced anodization. The application of a negative bias voltage to a heavily doped silicon tip relative to the sample substrate permitted nanoscale lines and dots of titanium oxide to be formed directly on the titanium surfaces. Their sizes were dependent on the relative humidity, the scanning rate of the tip, and the pulse duration time. The spatial resolution of titanium oxide patterns was improved by increasing the tip scan rate and also by lowering the relative humidity. The smallest linewidth obtained in this experiment was about 18 nm. With increasing pulse duration time, the growth rate of oxide rapidly decreased. This result can be attributed to the decrease of the transport rate of ionic species through the existing oxide layer due to a reduction of electric field strength with increasing the oxide thickness. (C) 2000 American Vacuum Society.
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页码:55 / 59
页数:5
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