Synthesis, structure and dielectric properties of new ordering perovskites LnPbMgSbO6 (Ln = La, Pr, Nd)

被引:5
|
作者
Han, Lin [1 ,2 ]
Bai, Yijia [3 ]
Liu, Xiaojuan [1 ]
Yao, Chuangang [1 ,2 ]
Meng, Junling [1 ,2 ]
Liang, Qingshuang [1 ,2 ]
Wu, Xiaojie [1 ]
Meng, Jian [1 ]
机构
[1] Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Rare Earth Resources Utilizat, Changchun 130022, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Inner Mongolia Univ Technol, Chem Engn Coll, Dept Appl Chem, Hohhot 010051, Peoples R China
基金
中国国家自然科学基金;
关键词
Double perovskites; Chemical pressure; p-block element; Raman spectroscopy; Dielectric properties; MAGNETIC-PROPERTIES;
D O I
10.1016/j.solidstatesciences.2014.07.005
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
The synthesis, crystal structure, and dielectric properties of the titled compounds were described. The structural symmetry was determined to be monoclinic P2(1)/n (No. 14) space group. Based on the highly ordered array of alternating MgO6 and SbO6 octahedra, these double perovskites exhibited significant octahedral tilting distortion according to the Glazer's notation system a(-)a(-)c(+). As the result of substituting different rare earth ions from La3+ to Nd3+, both the tolerance factor (t) and coordination number (CN) were reduced simultaneously and the B-site lattice distorted more heavily with the increase in chemical pressure by adopting smaller Ln(3+) ion. For the investigation of dielectric properties, all the samples consistently presented weak frequency dependent characteristic with relatively low dielectric constant (epsilon') and low tangent loss (tan delta). With the shrinkage of the Ln(3+) ion size, the corresponding epsilon' decreased remarkably and the dispersive tan delta peaks around 300 K shifted to low temperature, indicating that the space-charge-hopping mechanism dominated permittivity property can be tuned by controlling the degree of lattice distortion via substituting different Ln(3+) ions. (C) 2014 Elsevier Masson SAS. All rights reserved.
引用
收藏
页码:8 / 15
页数:8
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