Influence of polarization induced electric fields on the wavelength and the refractive index of intersubband transitions in AlN/GaN coupled double quantum wells

被引：7

作者：

Cen, L. B. ^{[1
]}

Shen, B. ^{[1
]}

Qin, Z. X. ^{[1
]}

Zhang, G. Y. ^{[1
]}

机构：

[1] Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Sch Phys, Beijing 100871, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 09期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.3124373

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of polarization induced electric fields on the wavelength and the refractive index of intersubband transitions (ISBTs) in AlN/GaN coupled double quantum wells (CDQWs) has been performed by solving Schrodinger and Poisson equations self-consistently. It is found that the intersubband refractive index change of the ISBT between the ground state and the second excited state (1(odd)-2(odd) ISBT) increases, while that of the ISBT between the ground state and the third excited state (1(odd)-2(even) ISBT) decreases with the increase of the polarization induced electric fields. The maximal intersubband refractive index change of the 1(odd)-2(odd) ISBT can be up to 0.142. The results are finally used to discuss the prospects of nitride quantum wells for electric-optical modulation via cross-phase modulation operating within optical communication wavelength range. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3124373]

引用

页数：5

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