Growth and characterization of electrosynthesized iron selenide thin films

被引:101
|
作者
Thanikilkarasan, S. [1 ]
Mahalingam, T. [1 ]
Sundaram, K. [1 ]
Kathalingam, A. [2 ]
Kim, Yong Deak [3 ]
Kim, Taekyu [4 ]
机构
[1] Alagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, India
[2] Periyar Maniammai Univ, Dept Phys, Tanjavur 613403, India
[3] Ajou Univ, Coll Informat Technol, Dept Elect & Comp Engn, Suwon 443749, South Korea
[4] Univ Arizona, Dept Elect & Comp Engn, Tucson, AZ 85721 USA
关键词
Thin films; FeSe; Electrodeposition; Cyclic voltammetry; X-ray diffraction; Scanning electron microscopy; Energy dispersive analysis by X-rays; Photoelectrochemical solar cells; ELECTROCHEMICAL DEPOSITION; CATHODIC DEPOSITION; ZINC TELLURIDE;
D O I
10.1016/j.vacuum.2009.01.004
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Iron selenide (FeSe) thin films were electrodeposited onto indium doped tin oxide coated conducting glass (ITO) substrates at various bath temperatures front 30 C to 90 C in in aqueous electrolytic bath containing FeSO4 and SeO2. The deposition mechanism was investigated using Cyclic voltammetry. The appropriate potential region where the formation of stoichiometric iron selenide thin films' Occurs was found to be 1100 mV versus SCE. X-ray diffraction studies revealed that the deposited films are found to be hexagonal structure with a preferential orientation along (002) plane. The parameters such as crystallite size, strain, dislocation density are calculated from X-ray diffraction studies. Optical absorption measurements were used to estimate the band gap value of iron selenide thin films deposited at various bath temperatures. Scanning electron microscopy (SEM) was used to study the surface morphology. The Composition of FeSe thin films was analyzed using an energy dispersive analysis by Xrays (EDX) set up attached with scanning election microscopy. Preliminary Studies for photo-electrochemical solar cells based oil iron selenide thin films were carried out and the experimental observations are discussed. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1066 / 1072
页数:7
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