The influence mechanism of Al2O3 layer and etching depth on 2DEG sheet density in gate-recessed Al2O3/AlGaN/GaN MOS-HEMTs

被引：0

作者：

Li, Peng ^{[1
]}

Cao, Yan-Rong ^{[1
,2
]}

Dai, Feng ^{[1
]}

Zhang, Ya-Song ^{[1
]}

Zhu, Qing ^{[2
]}

Lv, Ling ^{[2
]}

Ma, Xiao-Hua ^{[2
]}

Hao, Yue ^{[2
]}

机构：

[1] Xidian Univ, Sch Mechanoelect Engn, Xian 710071, Shaanxi, Peoples R China

[2] Xidian Univ, Sch Microelect, Wide Bandgap Semicond Technologe Disciplines Stat, Xian 710071, Shaanxi, Peoples R China

来源：

2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Capacitance-voltage (C-V) characteristics have been measured in this paper to calculate the depth profiles of GaN carrier concentration in four different structure GaN-based HEMTs, revealing the consequences of Al2O3 oxide layer and etching depth on two-dimensional electron gas (2DEG) sheet density. Combining the energy band diagrams with the theoretical calculation formula of 2DEG, we analyzed corresponding influence mechanism systematically.

引用

页码：1059 / 1061

页数：3

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