Characteristic evaluation of SiNx:H films passivation effect on Ga-doped multi-crystalline silicon wafers

被引：0
|
作者：
Arifuku, N. [1 ]
Jin, H. [1 ]
Jeon, M. S. [1 ]
Dhamrin, M. [1 ]
Suda, M. [1 ]
Saitoh, T. [1 ]
Kamisako, K. [1 ]
机构：
[1] Tokyo Univ Agr & Technol, Fac Technol, 2-24-16,Nakacho, Koganei, Tokyo 1848588, Japan
来源：
CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2 | 2006年
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D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
This paper presents the effect of silicon nitride (SiNx:H) films formed by Plasma-Enhanced Chemical Vapor Deposition (PECVD) method on Ga-doped multi-crystalline silicon (mc-Si) wafers including the passivation quality and carrier lifetime improvement after hydrogenation. The FT-IR spectra of SiNx:H films deposited at different SiH4/NH3 gas flow ratios in PECVD are used to calculated the hydrogen concentrations and bond densities of Si-H-n, N-H and Si-N were calculated. Furthermore, the effect of forming gas annealing (FGA) on the effective lifetime of passivated wafers by PECVD is investigated at different temperatures.
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页码：1287 / +
页数：2
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