A Low-Power Wideband Dual-Feedback LNA Exploiting the Gate-Inductive Bandwidth/Gain-Enhancement Technique

被引：0
|
作者：
Chou, Hung-Ting [1 ]
Chen, Shin-Wei [1 ]
Chiou, Hwann-Kaeo [1 ]
机构：
[1] Natl Cent Univ, Dept Elect Engn, Taipei, Taiwan
来源：
2013 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (IMS) | 2013年
关键词：
CMOS LNA; feedback; gate-inductive bandwidth gain-enhancement;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel wideband dual-feedback low noise amplifier (LNA) implemented in standard 0.18 mu m CMOS process is proposed in this paper. The proposed dual feedback topology can improve the total noise contribution for LNA design. By exploiting the gate-inductive bandwidth gain-enhancement (GIBE) technique, the LNA can extend the more than 30 % bandwidth and enhance gain an overall bandwidth of DC to 5 GHz. Besides, the fabricated LNA with the current-mirror circuit consumes a power of 10.4 mW. The proposed LNA achieves an average gain of 13.9 dB and a minimum noise figure (NF) of 2.76 dB from DC to 5 GHz. The LNA achieves a good figure-of-merit (FoM) of 3.8. The chip area is 0.45 mm(2) with all pads and dummy blocks.
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页数：3
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